Low on‐Resistance and Low Trapping Effects in 1200 V Superlattice GaN‐on‐Silicon Heterostructures

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https://hal.archives-ouvertes.fr/hal-02356752
Contributor : Farid Medjdoub <>
Submitted on : Friday, November 8, 2019 - 11:23:57 PM
Last modification on : Saturday, November 9, 2019 - 1:54:44 AM

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Riad Kabouche, Idriss Abid, Roland Püsche, Joff Derluyn, Stefan Degroote, et al.. Low on‐Resistance and Low Trapping Effects in 1200 V Superlattice GaN‐on‐Silicon Heterostructures. physica status solidi (a), Wiley, 2019, ⟨10.1002/pssa.201900687⟩. ⟨hal-02356752⟩

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