GaN-on-silicon high-electron-mobility transistor technology with ultra-low leakage up to 3000 V using local substrate removal and AlN ultra-wide bandgap

Ezgi Dogmus (1) , Malek Zegaoui (1) , F Medjdoub (1, 2)

1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
2 WIND - IEMN - WIde baNd gap materials and Devices - IEMN

We report on extremely low off-state leakage current in AlGaN/GaN-on-silicon metal–insulator–semiconductor high-electron-mobility transistors (MISHEMTs) up to a high blocking voltage. Remarkably low off-state gate and drain leakage currents below 1 µA/mm up to 3 kV have been achieved owing to the use of a thick in situ SiN gate dielectric under the gate, and a local Si substrate removal technique combined with a cost effective 15-µm-thick AlN dielectric layer followed by a Cu deposition. This result establishes a manufacturable state-of-the-art high-voltage GaN-on-silicon power transistors while maintaining a low specific on-resistance of approximately 10 mΩcenterdotcm2.

Domaines: Micro et nanotechnologies/Microélectronique

Ezgi Dogmus, Malek Zegaoui, F Medjdoub. GaN-on-silicon high-electron-mobility transistor technology with ultra-low leakage up to 3000 V using local substrate removal and AlN ultra-wide bandgap. Applied Physics Express, 2018, 11 (3), pp.034102. ⟨10.7567/APEX.11.034102⟩. ⟨hal-02356739⟩