GaN-on-silicon high-electron-mobility transistor technology with ultra-low leakage up to 3000 V using local substrate removal and AlN ultra-wide bandgap

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https://hal.archives-ouvertes.fr/hal-02356739
Contributor : Farid Medjdoub <>
Submitted on : Friday, November 8, 2019 - 10:58:07 PM
Last modification on : Saturday, November 9, 2019 - 1:54:45 AM

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Ezgi Dogmus, Malek Zegaoui, Farid Medjdoub. GaN-on-silicon high-electron-mobility transistor technology with ultra-low leakage up to 3000 V using local substrate removal and AlN ultra-wide bandgap. Applied Physics Express, IOPScience - Japan Society of Applied Physics, 2018, 11 (3), pp.034102. ⟨10.7567/APEX.11.034102⟩. ⟨hal-02356739⟩

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