The Effects of AlN and Copper Back Side Deposition on the Performance of Etched Back GaN/Si HEMTs

Complete list of metadatas

https://hal.archives-ouvertes.fr/hal-02356736
Contributor : Farid Medjdoub <>
Submitted on : Friday, November 8, 2019 - 10:55:20 PM
Last modification on : Saturday, November 9, 2019 - 1:54:45 AM

Identifiers

Citation

Georges Pavlidis, Samuel Kim, Idriss Abid, Malek Zegaoui, Farid Medjdoub, et al.. The Effects of AlN and Copper Back Side Deposition on the Performance of Etched Back GaN/Si HEMTs. IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2019, 40 (7), pp.1060-1063. ⟨10.1109/LED.2019.2915984⟩. ⟨hal-02356736⟩

Share

Metrics

Record views

10