Impact of the in situ SiN Thickness on Low-Frequency Noise in MOVPE InAlGaN/GaN HEMTs

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https://hal.archives-ouvertes.fr/hal-02356735
Contributor : Farid Medjdoub <>
Submitted on : Friday, November 8, 2019 - 10:54:04 PM
Last modification on : Monday, November 11, 2019 - 9:14:21 AM

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M. Rzin, B. Guillet, L. Mechin, P. Gamarra, C. Lacam, et al.. Impact of the in situ SiN Thickness on Low-Frequency Noise in MOVPE InAlGaN/GaN HEMTs. IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2019, pp.1-4. ⟨10.1109/TED.2019.2945296⟩. ⟨hal-02356735⟩

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