High performance tunnel field effect transistors based on in-plane transition metal dichalcogenide heterojunctions

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Contributor : Philippe Dollfus <>
Submitted on : Thursday, November 7, 2019 - 10:51:11 AM
Last modification on : Wednesday, November 20, 2019 - 8:46:13 AM

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Jean Choukroun, Marco Pala, Shiang Fang, Efthimios Kaxiras, Philippe Dollfus. High performance tunnel field effect transistors based on in-plane transition metal dichalcogenide heterojunctions. Nanotechnology, Institute of Physics, 2019, 30 (2), pp.025201. ⟨10.1088/1361-6528/aae7df⟩. ⟨hal-02353099⟩

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