Investigation of reaction mechanisms in the chemical vapor deposition of al from DMEAA

Abstract : We propose a novel reaction scheme for the chemical vapor deposition (CVD) of Al films on substrates from dimethylethylamine alane (DMEAA), supported by the prediction of the Al deposition rate as a function of process temperature. The scheme is based on gas phase oligomerizations of alane which form a substantial amount of intermediates. Combined with reversible surface dehydrogenation steps, the global deposition reaction is composed of a set of 12 chemical reactions. This new scheme entails four interme-diates and includes side reactions that play an important role in the formation of Al thin films. The chemistry mechanism is incorporated in a 2D Computational Fluid Dynamics (CFD) model of the CVD reactor setup used for the experimental investigation. The simulation predictions of the Al deposition rate are in good agreement with corresponding experimental measurements. The success of this novel reaction pathway lies in its ability to capture the abrupt decrease of the deposition rate at temperatures above 200°C, which is attributed to the gas phase consumption of alane along with its increased desorption rate from the film surface
Document type :
Journal articles
Complete list of metadatas

Cited literature [40 references]  Display  Hide  Download

https://hal.archives-ouvertes.fr/hal-02352067
Contributor : Thomas Duguet <>
Submitted on : Thursday, November 7, 2019 - 4:45:01 PM
Last modification on : Friday, November 8, 2019 - 1:23:45 AM

File

psarellis_19367.pdf
Files produced by the author(s)

Identifiers

Collections

Citation

George Psarellis, Ioannis Aviziotis, Thomas Duguet, Constantin Vahlas, Eleni Koronaki, et al.. Investigation of reaction mechanisms in the chemical vapor deposition of al from DMEAA. Chemical Engineering Science, Elsevier, 2018, 177, pp.464-470. ⟨10.1016/j.ces.2017.12.006⟩. ⟨hal-02352067⟩

Share

Metrics

Record views

35

Files downloads

11