High performance WTe2-MoS2in-plane heterojunction Tunnel Field Effect Transistors

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https://hal.archives-ouvertes.fr/hal-02351006
Contributor : Marco Pala <>
Submitted on : Wednesday, November 6, 2019 - 11:24:24 AM
Last modification on : Friday, November 8, 2019 - 1:20:51 AM

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Marco G. Pala, Jean Choukroun, Shiang Fang, Efthimios Kaxiras, Philippe Dollfus. High performance WTe2-MoS2in-plane heterojunction Tunnel Field Effect Transistors. 48th European Solid-State Device Research Conference (ESSDERC 2018), Sep 2018, Dresden, France. pp.42-45, ⟨10.1109/ESSDERC.2018.8486869⟩. ⟨hal-02351006⟩

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