High performance tunnel field effect transistors based on in-plane transition metal dichalcogenide heterojunctions

Complete list of metadatas

https://hal.archives-ouvertes.fr/hal-02350992
Contributor : Marco Pala <>
Submitted on : Wednesday, November 6, 2019 - 11:19:24 AM
Last modification on : Friday, November 8, 2019 - 1:20:51 AM

Links full text

Identifiers

Collections

Citation

Jean Choukroun, Marco Pala, Shiang Fang, Efthimios Kaxiras, Philippe Dollfus. High performance tunnel field effect transistors based on in-plane transition metal dichalcogenide heterojunctions. Nanotechnology, Institute of Physics, 2019, 30 (2), pp.025201. ⟨10.1088/1361-6528/aae7df⟩. ⟨hal-02350992⟩

Share

Metrics

Record views

6