Study of GaN layer crystallization on GaAs(100) using electron cyclotron resonance or glow discharge N2 plasma sources for the nitriding process

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https://hal.archives-ouvertes.fr/hal-02345167
Contributor : Catherine Bougerol <>
Submitted on : Monday, November 4, 2019 - 2:04:17 PM
Last modification on : Tuesday, November 5, 2019 - 9:45:25 AM

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H. Mehdi, F. Réveret, Catherine Bougerol, C. Robert-Goumet, P.E. Hoggan, et al.. Study of GaN layer crystallization on GaAs(100) using electron cyclotron resonance or glow discharge N2 plasma sources for the nitriding process. Applied Surface Science, Elsevier, 2019, 495, pp.143586. ⟨10.1016/j.apsusc.2019.143586⟩. ⟨hal-02345167⟩

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