Study of GaN layer crystallization on GaAs(100) using electron cyclotron resonance or glow discharge N2 plasma sources for the nitriding process

H. Mehdi (1) , F. Réveret (1) , Catherine Bougerol (2) , C. Robert-Goumet (1) , P.E. Hoggan (1) , L. Bideux (1) , B. Gruzza (1) , J. Leymarie (1) , G. Monier (1)

1 IP - Institut Pascal
2 NEEL - NPSC - Nanophysique et Semiconducteurs

Domaines: Science des matériaux [cond-mat.mtrl-sci]

H. Mehdi, F. Réveret, Catherine Bougerol, C. Robert-Goumet, P.E. Hoggan, et al.. Study of GaN layer crystallization on GaAs(100) using electron cyclotron resonance or glow discharge N2 plasma sources for the nitriding process. Applied Surface Science, 2019, 495, pp.143586. ⟨10.1016/j.apsusc.2019.143586⟩. ⟨hal-02345167⟩