Reliablity issues in 4H-SiC MOSFETs

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https://hal.archives-ouvertes.fr/hal-02342945
Contributor : Frédéric Richardeau <>
Submitted on : Friday, November 1, 2019 - 5:08:52 PM
Last modification on : Wednesday, December 11, 2019 - 4:23:27 PM

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Alberto Castellazzi, Andrea Irace, Frédéric Richardeau. Reliablity issues in 4H-SiC MOSFETs. keynote presentation, First International Workshop on Wide Band Gap Innovative SiC for Advanced Power, Tours, France, on March 7, 2019. University of Tours and Italian Inter-University Consortium for Nanoelectronics (IUNET), European Project WinSiC4AP, www.winsic4ap-project.org, Mar 2019, Tours, France. ⟨hal-02342945⟩

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