Ensure an original and safe “fail-to-open” mode in planar and trench power SiC MOSFET devices in extreme short-circuit operation

Abstract : The purpose of this paper is to present a complete experimentation of the two failure modes in competition that can appear during short-circuit (SC) fault operation of single-chip 1,2 kV SiC MOSFETs from different manufacturers including planar and trench-gate structures, well-known or recent devices. Ruggedness and selective failure modes are identified in relation with the power density dissipated by the chip and the simulated 1D-thermal junction. Finally, the chips of the devices which failed in a “fail-to-open” mode have been studied in order to find the physical reasons of this original and unusual fail-safe mode.
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https://hal.archives-ouvertes.fr/hal-02342927
Contributor : Frédéric Richardeau <>
Submitted on : Friday, November 1, 2019 - 4:38:03 PM
Last modification on : Wednesday, December 11, 2019 - 4:22:22 PM

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François Boige, Frédéric Richardeau, Stéphane Lefebvre, Jean Marc Blaquière, Gérard Guibaud, et al.. Ensure an original and safe “fail-to-open” mode in planar and trench power SiC MOSFET devices in extreme short-circuit operation. Microelectronics Reliability, Elsevier, 2018, 88-90, pp.598-603. ⟨10.1016/j.microrel.2018.07.026⟩. ⟨hal-02342927⟩

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