Molecular-beam epitaxy of GaInSbBi alloys

O. Delorme (1, 2) , L. Cerutti (1, 2) , E. Luna (3) , A. Trampert (3) , E. Tournié (1, 2) , J.-B. Rodriguez (1, 2)

1 IES - Institut d’Electronique et des Systèmes
2 NANOMIR - Composants à Nanostructure pour le moyen infrarouge
3 PDI - Paul-Drude-Institut für Festkörperelektronik

We have grown GaInSbBi single layers and GaInSbBi/GaSb multi-quantum well (MQW) structures by Molecular Beam Epitaxy. We observed that the addition of In strongly modifies and reduces the Bi incorporation into GaSb. For an In concentration of ~3.7%, we reached a maximum Bi content of 10.5% while the highest Bi concentration falls down to 3% with 10% of In. Additionally, droplets appear at lower Bi composition than in GaSbBi alloys. Finally, the optical properties of GaInSbBi/GaSb MQW structures were characterized by photoluminescence spectroscopy at room-temperature. The longest emission wavelength observed was close to 2.6 µm for a composition of 10.5% and 3.7% of Bismuth and Indium respectively.

Domaines: Micro et nanotechnologies/Microélectronique; Science des matériaux [cond-mat.mtrl-sci]

O. Delorme, L. Cerutti, E. Luna, A. Trampert, E. Tournié, et al.. Molecular-beam epitaxy of GaInSbBi alloys. Journal of Applied Physics, 2019, Highly Mismatched Semiconductors Alloys: from Atoms to Devices, 126 (15), pp.155304. ⟨10.1063/1.5096226⟩. ⟨hal-02326087⟩