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Monolithic asymmetric switching cells integrated on vertical multi-terminal Si power chips

Abstract : Power electronic converters (power modules) are essential devices for high efficient power management. Applications are ever more demanding in terms of compactness, reliability and cost reduction with increased intrinsic performance. The current technology of standard power modules, that use IGBT chips, is reaching its limits and the margins for improvement do not allow to meet the short-term emerging needs. Indeed, in a standardpower module, each switching cell requires the manufacture of two chips and two wirebonds for interconnections. Each wirebond is a source of stray inductance and constitutes a limiting factor of electrical performance, a source of an increase in the level of electrical stress and of reliability problems. It is customary to place a decoupling capacitor on the power supply terminals of the switching cell. This capacitor makes it possible to compensate the stray inductance prior to the switching cell but itdoesn’t compensate in any way the stray inductance within the switching cell. This paper proposes for the first time a concept of an ultimate monolithic wire-bondless switching cell that allows to suppress the wirebonds within the switching cell and therefore minimize the stray inductance value. Consequently, it is suited for the emerging applications requiring to achieve simultaneously: reliability, compactness, intrinsic performance and reduced manufacturing cost.
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Contributor : Frédéric Richardeau <>
Submitted on : Tuesday, October 27, 2020 - 3:53:44 PM
Last modification on : Thursday, November 19, 2020 - 3:09:17 AM


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  • HAL Id : hal-02337047, version 1


Abdelhakim Bourennane, Adem Lale, Frédéric Richardeau. Monolithic asymmetric switching cells integrated on vertical multi-terminal Si power chips. EPE Conference and Applications, Sep 2019, Gênes, Italy. 8p. ⟨hal-02337047⟩



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