Ga co-doping in Cz-grown silicon ingots to overcome limitations of B and P compensated silicon feedstock for PV applications

Maxime Forster (1, 2) , Erwann Fourmond (3) , Roland Einhaus (2) , Hubert Lauvray (2) , Jed Kraiem (2) , Mustapha Lemiti (3)

1 INL - Institut des Nanotechnologies de Lyon
2 Apollon Solar - Apollon Solar
3 INL - PV - INL - Photovoltaïque

Domaines: Science des matériaux [cond-mat.mtrl-sci]; Micro et nanotechnologies/Microélectronique

Maxime Forster, Erwann Fourmond, Roland Einhaus, Hubert Lauvray, Jed Kraiem, et al.. Ga co-doping in Cz-grown silicon ingots to overcome limitations of B and P compensated silicon feedstock for PV applications. physica status solidi (c), 2011, 8 (3), pp.678-681. ⟨10.1002/pssc.201000330⟩. ⟨hal-02333385⟩