Electrically controlled switching of the magnetization state in multiferroic BaTiO3/CoFe submicrometer structures

R Lo Conte (1) , J. Gorchon (1, 2) , A. Mougin (3) , C H A Lambert (1) , A El-Ghazaly (1) , A. Scholl (4) , S. Salahuddin (1) , J. Bokor (2, 1)

1 EECS - Department of Electrical Engineering and Computer Science [Berkeley]
2 LBNL - Lawrence Berkeley National Laboratory [Berkeley]
3 LPS - Laboratoire de Physique des Solides
4 ALS - Advanced Light Source [LBNL Berkeley]

The development of reliable and highly energy efficient multiferroic nanosystems, which can function atroom temperature, is key for the design of ultralow-power magnetoelectric devices. Here, we report electricallycontrolled magnetic domain wall motion and magnetization switching in BaTiO3/Co50Fe50microstructures, atroom temperature. The perfect one-to-one connection between the ferroelectric domain pattern of the BaTiO3crystal and the ferromagnetic state of the CoFe microstructures, which relies on a strain-induced magneticanisotropy modification, is the cause of the observed magnetoelectric effect. As a result, the observed electricallydriven magnetization switching is highly reliable, independent of the shape and size of the microstructures.This is a key factor that makes the studied multiferroic system very promising for integration in real-worldmagnetoelectric devices.

Domaines: Matière Condensée [cond-mat]

R Lo Conte, J. Gorchon, A. Mougin, C H A Lambert, A El-Ghazaly, et al.. Electrically controlled switching of the magnetization state in multiferroic BaTiO3/CoFe submicrometer structures. Physical Review Materials, 2018, 2, ⟨10.1103/PhysRevMaterials.2.091402⟩. ⟨hal-02388437⟩