E. Linn, R. Rosezin, S. Tappertzhofen, U. Böttger, and R. Waser, Nanotechnology, vol.23, p.305205, 2012.

J. J. Yang, D. B. Strukov, and D. R. Stewart, Nat. Nanotechnol, issue.8, p.13, 2013.

H. S. Wong and S. Salahuddin, Nat. Nanotechnol, vol.10, p.191, 2015.

J. Borghetti, G. S. Snider, P. J. Kuekes, J. J. Yang, D. R. Stewart et al., Nature, p.873, 2010.

M. M. Shulaker, G. Hills, R. S. Park, R. T. Howe, K. Saraswat et al., Nature, vol.547, p.74, 2017.

N. Locatelli, V. Cros, and J. Grollier, Nat. Mater, vol.13, p.11, 2013.

J. Grollier, D. Querlioz, and M. D. Stiles, Proc. IEEE 2016, vol.104, 2024.

M. Prezioso, F. Merrikh-bayat, B. D. Hoskins, G. C. Adam, K. K. Likharev et al., Nature, vol.521, p.61, 2015.

S. Yuasa and D. D. Djayaprawira, J. Phys. D Appl. Phys, p.337, 2007.

S. Ikeda, K. Miura, H. Yamamoto, K. Mizunuma, H. D. Gan et al., Nat. Mater, p.721, 2010.

A. D. Kent and D. C. Worledge, Nat. Nanotechnol, vol.10, p.187, 2015.

H. S. Wong, H. Y. Lee, S. Yu, Y. S. Chen, Y. Wu et al., Proc. IEEE 2012, vol.100, 1951.

W. Lin, S. Liu, T. Gong, Q. Zhao, and W. Huang, Adv. Mater, vol.26, p.570, 2014.

U. Celano, L. Goux, A. Belmonte, K. Opsomer, A. Franquet et al., Nano Lett, p.2401, 2014.

D. Querlioz, O. Bichler, A. F. Vincent, and C. Gamrat, Proc. IEEE 2015, p.1398

D. Zhang, L. Zeng, K. Cao, M. Wang, S. Peng et al., IEEE Trans. Biomed. Circuits Syst, vol.10, p.828, 2016.

Y. J. Song, J. H. Lee, H. C. Shin, K. H. Lee, K. Suh et al.,

H. Hwang and G. H. Koh, Electron Devices Meeting (IEDM), vol.27, 2016.

N. Tezuka, S. Oikawa, I. Abe, M. Matsuura, S. Sugimoto et al., , vol.7, p.3104204, 2016.

W. Kang, Z. Li, J. Klein, Y. Chen, Y. Zhang et al., IEEE Trans. Nanotechnol, vol.13, p.1088, 2014.

D. Halley, H. Majjad, M. Bowen, N. Najjari, Y. Henry et al., Appl. Phys. Lett, p.212115, 2008.

P. Krzysteczko, G. Reiss, and A. Thomas, Appl. Phys. Lett, p.112508, 2009.

J. M. Teixeira, J. Ventura, R. Fermento, J. P. Araujo, J. B. Sousa et al., J. Phys. D. Appl. Phys, p.105407, 2009.

J. Yao, Z. Sun, L. Zhong, D. Natelson, and J. M. Tour, Nano Lett, p.4105, 2010.

J. Chen, C. Huang, C. Chiu, Y. Huang, and W. Wu, Adv. Mater, p.5028, 2015.

S. Kumar, C. E. Graves, J. P. Strachan, E. M. Grafals, A. L. Kilcoyne et al., Adv. Mater, vol.28, p.2772, 2016.

C. Li, B. Gao, Y. Yao, X. Guan, X. Shen et al., Adv. Mater, vol.29, p.1602976, 2017.

W. Huang, J. Kennedy, and R. Katsanes, , p.223, 2011.

Z. Wang, M. Saito, K. P. Mckenna, S. Fukami, H. Sato et al., , p.1530, 2016.

S. Yuasa, Y. Suzuki, T. Katayama, and K. Ando, Appl. Phys. Lett, vol.87, p.242503, 2005.

X. Lou, Z. Gao, D. V. Dimitrov, and M. X. Tang, Appl. Phys. Lett, p.242502, 2008.

C. D. Wagner, L. H. Gale, and R. H. Raymond, Anal. Chem, p.466, 1979.

C. Hollerith, D. Wernicke, M. Bühler, F. V. Feilitzsch, M. Huber et al., Nucl. Instruments Methods Phys. A, p.606, 2004.

J. Yao, L. Zhong, D. Natelson, and J. M. Tour, Appl. Phys. A, p.835, 2011.

G. Xia, Z. Ma, X. Jiang, H. Yang, J. Xu et al., J. Non. Cryst. Solids, vol.358, p.2348, 2012.

Y. Wang, X. Qian, K. Chen, Z. Fang, W. Li et al., Appl. Phys. Lett, p.42103, 2013.

F. Zhou, Y. F. Chang, Y. Wang, Y. T. Chen, F. Xue et al., Appl. Phys. Lett, p.163506, 2014.

Y. Zhang, W. Zhao, Y. Lakys, J. O. Klein, J. Kim et al., IEEE Trans. Electron Devices, vol.59, p.819, 2012.

U. Russo, D. Ielmini, C. Cagli, and A. L. Lacaita, IEEE Trans. Electron Devices, vol.56, p.193, 2009.

X. Zhang, W. H. Butler, and A. Bandyopadhyay, Phys. Rev. B, p.92402, 2003.

C. Tusche, H. L. Meyerheim, N. Jedrecy, G. Renaud, A. Ernst et al., Phys. Rev. Lett, p.176101, 2005.

F. Bonell, S. Andrieu, A. M. Bataille, C. Tiusan, and G. Lengaigne, Phys. Rev. B -Condens. Matter Mater. Phys, p.224405, 2009.

, The device is based on a resistively enhanced MRAM element integrated with an MTJ nanopillar surrounded by silicon filaments that behave as resistive switches. The device features magnetic switching together with a high ON/OFF ratio of > 1000% and multilevel resistance behaviour. Keywords: heterogeneous device, resistive switching, A nanoscale heterogeneous memristive device combining the advantages of MRAM and RRAM is demonstrated

Y. Zhang, X. Lin, J. Adam, G. Agnus, W. Kang et al., Weisheng Zhao*, and Dafine Ravelosona Heterogeneous Memristive Devices Enabled by Magnetic Tunnel Junction Nanopillars Surrounded by Resistive Silicon Switches