Nanostructure and Physical Properties Control of Indium Tin Oxide Films Prepared at Room Temperature through Ion Beam Sputtering Deposition at Oblique Angles
Résumé
In this paper, we report the fabrication of porous and crystalline tin-doped indium oxide (ITO) thin films at room temperature by ion beam sputtering deposition at oblique angles using either argon or xenon ions. Deep insights into these systems are provided by coupling nanostructural (scanning and transmission electron microscopies, X-ray diffraction) and optical (spectroscopic ellipsometry, spectral reflectometry) characterizations. This original approach allows extracting important features of the films (porosity, refractive indexes, in-grain carrier densities, and mobilities) not easy to reach locally by other techniques. We propose a model decomposing the complex film’s nanostructure into two layers presenting different electro-optical properties, which are attributed to the shadowing effect, but also to the presence of growth defects and impurities due to the atomic peening. In particular, we demonstrate that ITO films deposited with Xe present a better crystallinity and larger porosity, providing superior in-grain carrier transport and offering more flexibility to design broad-band low-reflectivity surfaces. These results widen the possibilities to engineer transparent and conductive thin films at room temperature with enhanced properties, especially in the near-infrared range where oblique angle deposition allows a reduction of reflectivity even at high doping.