GaSbBi alloys and heterostructures: fabrication and properties

O. Delorme (1, 2) , L. Cerutti (1, 2) , R. Kudrawiec (3) , Esperanza Luna (4) , J. Kopaczek (3) , M. Gladysiewicz (3) , A. Trampert (4) , E. Tournié (1, 2) , J.-B. Rodriguez (1, 2)

1 IES - Institut d’Electronique et des Systèmes
2 NANOMIR - Composants à Nanostructure pour le moyen infrarouge
3 Wroclaw University of Science and Technology
4 PDI - Paul-Drude-Institut für Festkörperelektronik

Dilute bismuth (Bi) III-V alloys have recently attracted great attention, due to their properties of band-gap reduction and spin-orbit splitting. The incorporation of Bi into antimonide based III-V semiconductors is very attractive for the development of new optoelectronic devices working in the mid-infrared range (2-5 µm). However, due to its large size, Bi does not readily incorporate into III-V alloys and the epitaxy of III-V dilute bismides is thus very challenging. This book chapter presents the most recent developments in the epitaxy and characterization of GaSbBi alloys and heterostructures.

Domaines: Science des matériaux [cond-mat.mtrl-sci]; Micro et nanotechnologies/Microélectronique

O. Delorme, L. Cerutti, R. Kudrawiec, Esperanza Luna, J. Kopaczek, et al.. GaSbBi alloys and heterostructures: fabrication and properties. Wang, Shumin and Lu, Pengfei. Bismuth-Containing Alloys and Nanostructures, Springer Series in Materials Science, pp.125-161, 2019, 978-981-13-8077-8. ⟨10.1007/978-981-13-8078-5_6⟩. ⟨hal-02326182⟩