Molecular-beam epitaxy of GaSb on 6°-offcut (001) Si using a GaAs nucleation layer

M. Rio Calvo (1, 2) , J-B Rodriguez (1, 2) , L. Cerutti (1, 2) , M. Ramonda (3) , G. Patriarche (4) , E. Tournié (1, 2)

1 IES - Institut d’Electronique et des Systèmes
2 NANOMIR - Composants à Nanostructure pour le moyen infrarouge
3 Centrale de Technologie en Micro et Nanoélectronique CTM-­LMCP
4 C2N (UMR_9001) - Centre de Nanosciences et Nanotechnologies

We studied and optimized the molecular beam epitaxy of GaSb layers on vicinal (001) Si substrates using a GaAs nucleation layer. An in-depth analysis of the different growth stages under optimized conditions revealed the formation of a high density of small GaAs islands forming a quasi-two-dimensional layer. GaSb then nucleated atop this layer as three-dimensional islands before turning to two-dimensional growth within a few nanometers. Moreover, reflexion high-energy electron diffraction revealed a fast relaxation of GaAs on Si and of GaSb on GaAs. The GaSb layer quality was better than that of similar layers grown on Si through AlSb nucleation layers.

Domaines: Science des matériaux [cond-mat.mtrl-sci]; Micro et nanotechnologies/Microélectronique

M. Rio Calvo, J-B Rodriguez, L. Cerutti, M. Ramonda, G. Patriarche, et al.. Molecular-beam epitaxy of GaSb on 6°-offcut (001) Si using a GaAs nucleation layer. Journal of Crystal Growth, 2019, pp.125299. ⟨10.1016/j.jcrysgro.2019.125299⟩. ⟨hal-02326060⟩