Ohmic contacts study of P + N diodes on (111) and (100) diamond

Lya Fontaine (1) , Karine Isoird (1) , Josiane Tasselli (1) , Patrick Austin (1) , Alain Cazarré (2) , Amine Boussadi (3) , Jocelyn Achard (3) , Marie-Amandine Pinault-Thaury (4)

1 LAAS-ISGE - Équipe Intégration de Systèmes de Gestion de l'Énergie
2 LAAS-S4M - Équipe Instrumentation embarquée et systèmes de surveillance intelligents
3 LSPM - Laboratoire des Sciences des Procédés et des Matériaux
4 GEMAC - Groupe d'Etude de la Matière Condensée

Pseudo-vertical P + N diamond diodes are fabricated. We focused on the determination of specific contact resistance of Ti-based contacts for (111) and (100) p-type diamond layers doped around 10 19 at/cm 3 using circular Transfer Length Method (cTLM). Ohmic behavior is obtained and the variation of the specific contact resistance is discussed.

Mots clés: Diamond; Microfabrication; Power devices; P+N Diodes

Domaines: Matériaux; Micro et nanotechnologies/Microélectronique

Lya Fontaine, Karine Isoird, Josiane Tasselli, Patrick Austin, Alain Cazarré, et al.. Ohmic contacts study of P + N diodes on (111) and (100) diamond. 13th IEEE International Conference on Power Electronics and Drive Systems (PEDS 2019), Jul 2019, Toulouse, France. ⟨hal-02324743⟩