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Structural studies of epitaxial BaTiO3 thin film on silicon

Abstract : Keywords: Ferroelectricity Thin films Silicon Epitaxy Radio-frequency magnetron sputtering Infrared spectroscopy Phonon A B S T R A C T BaTiO 3 thin films (60 nm-thick) grown on SrTiO 3 /Si templates have been characterized for their structural and electrical properties. The epitaxy of the BaTiO 3 film on silicon was confirmed by X-ray diffraction with good crystallinity. The temperature-dependent structural properties were checked by infrared spectroscopy in absorption mode. The films were found to remain in a single ferroelectric phase over a temperature range from 5 to 385 K. Low-temperature orthorhombic-rhombohedral phase transitions characteristic of bulk BaTiO 3 are absent in the films due to the clamping effect from the Si substrate.
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Contributor : Guillaume Saint-Girons <>
Submitted on : Wednesday, November 25, 2020 - 3:43:53 PM
Last modification on : Wednesday, September 15, 2021 - 2:56:02 PM
Long-term archiving on: : Friday, February 26, 2021 - 6:03:51 PM


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B. Wagué, J.-B. Brubach, G. Niu, G. Dong, L. Dai, et al.. Structural studies of epitaxial BaTiO3 thin film on silicon. Thin Solid Films, Elsevier, 2020, 693, pp.137636. ⟨10.1016/j.tsf.2019.137636⟩. ⟨hal-02324723⟩



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