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Article Dans Une Revue Materials Today: Proceedings Année : 2018

Atomic scale mechanisms and brittle to ductile transition at low size in silicon

Résumé

Molecular dynamics (MD) simulations of silicon nanowires (NW) tensile deformation were performed. They reveal a great variety of behaviors, which are rationalized thanks to a diagram highlighting the sequences of elementary mechanisms. In particular, MD simulations show that cavity formation inside the NW can occur through dislocations interactions. To quantify the brittle/ductile character of the NWs for each tested conditions, we define a ductility parameter which is extracted from the simulation output. Its variation suggests that the brittle to ductile transition (BDT) at low size is not sharp, conversely to the well-known BDT for bulk silicon.
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Dates et versions

hal-02308704 , version 1 (08-10-2019)

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Sandrine Brochard, Firas Abed El Nabi, Laurent Pizzagalli, Amina Merabet, Michael Texier, et al.. Atomic scale mechanisms and brittle to ductile transition at low size in silicon. Materials Today: Proceedings, 2018, 5 (6), pp.14693-14704. ⟨10.1016/j.matpr.2018.03.059⟩. ⟨hal-02308704⟩
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