Dose Response of MOS Transistors Irradiated at Low Temperatures

Jason Dardié (1, 2, 3) , Jérôme Boch (2, 3) , Alain Michez (2, 3) , Antoine Touboul (3, 2) , Philippe Girones (4) , Jean-Roch Vaillé (2, 3) , Frédéric Saigné (2, 3) , Francoise Bezerra (5) , Jean-Luc Favre (1)

1 TMI-ORION
2 IES - Institut d’Electronique et des Systèmes
3 RADIAC - Radiations et composants
4 CEA-DES (ex-DEN) - CEA-Direction des Energies (ex-Direction de l'Energie Nucléaire)
5 CNES - Centre National d'Études Spatiales [Toulouse]

The effect of dose on MOS transistors is investigated for irradiation performed at low temperatures. Degradation of threshold voltage and drain off-state current is shown and discussed in terms of physical mechanisms.

Domaines: Electronique

Jason Dardié, Jérôme Boch, Alain Michez, Antoine Touboul, Philippe Girones, et al.. Dose Response of MOS Transistors Irradiated at Low Temperatures. IEEE Nuclear and Space Radiation Effects Conference (NSREC2019), Jul 2019, San Antonio, United States. ⟨hal-02307335⟩