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Graphene FETs With Aluminum Bottom-Gate Electrodes and Its Natural Oxide as Dielectrics

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https://hal.archives-ouvertes.fr/hal-02304371
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Submitted on : Thursday, October 3, 2019 - 11:09:20 AM
Last modification on : Tuesday, November 30, 2021 - 9:02:09 AM

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Wei Wei, Xin Zhou, Geetanjali Deokar, Haechon Kim, Mohamed Moez Belhaj, et al.. Graphene FETs With Aluminum Bottom-Gate Electrodes and Its Natural Oxide as Dielectrics. IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2015, 62 (9), pp.2769-2773. ⟨10.1109/TED.2015.2459657⟩. ⟨hal-02304371⟩

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