A New Process for the Fabrication of SiC Power Devices and Systems on SiCOI (Silicon Carbide On Insulator) Substrates

François Templier (1) , Nicolas Daval (2, 3, 4) , Léa Di Cioccio (1) , Daniel Bourgeat (1) , Fabrice Letertre (5) , Dominique Planson (3, 4) , Jean-Pierre Chante (3, 4) , Thierry Billon (1)

1 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
2 SOITEC Bernin, France
3 CEGELY - Centre de génie électrique de Lyon
4 INSA Lyon - Institut National des Sciences Appliquées de Lyon
5 SOITEC

Feasibility of 4H-SiC epitaxy on SiCOI substrates has been demonstrated, with high quality of obtained layers. Power Schottky diodes were designed and fabricated on these new structures, and exhibited very interesting electrical performance, particularly in reverse mode, with V br ~ 1000 V. This technology is very promising for the realization of monolithic SiC power systems.

Domaines: Energie électrique

François Templier, Nicolas Daval, Léa Di Cioccio, Daniel Bourgeat, Fabrice Letertre, et al.. A New Process for the Fabrication of SiC Power Devices and Systems on SiCOI (Silicon Carbide On Insulator) Substrates. 2002 MRS Fall Meeting, Dec 2002, Boston, United States. ⟨10.1557/PROC-742-K7.9⟩. ⟨hal-02298409⟩