OxRAM-Based Non Volatile Flip-Flop in 28nm FDSOI

Natalija Jovanovic (1) , Olivier Thomas (1) , Elisa Vianello (1) , Jean-Michel Portal (2) , Boris Nikolic (3) , Lirida Naviner (4, 5)

1 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
2 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence
3 Berkeley EECS - Department of Electrical Engineering and Computer Sciences
4 SSH - Secure and Safe Hardware
5 COMELEC - Département Communications & Electronique

This paper presents a robust OxRAM-based nonvolatile flip-flop (NVFF) solution, designed for deep nano-scaled CMOS technologies. Forming, set and reset operations rely on a reliable design approach using thin gate oxide CMOS. The NVFF is benchmarked against a standard FF in 28nm CMOS FDSOI. Non-volatility is added with minimal impact on the FF performances.

Domaines: Micro et nanotechnologies/Microélectronique

Natalija Jovanovic, Olivier Thomas, Elisa Vianello, Jean-Michel Portal, Boris Nikolic, et al.. OxRAM-Based Non Volatile Flip-Flop in 28nm FDSOI. 2014 IEEE 12th International New Circuits and Systems Conference (NEWCAS), Jun 2014, Trois Rivières, Canada. ⟨10.1109/NEWCAS.2014.6934003⟩. ⟨hal-02288534⟩