High Performance MRAM with Spin-Transfer-Torque and Voltage-Controlled Magnetic Anisotropy Effects

Hao Cai (1, 2) , Wang Kang (3) , You Wang (1, 2) , Lirida Naviner (1, 2) , Jun Yang (4) , Weisheng Zhao (3)

1 SSH - Secure and Safe Hardware
2 COMELEC - Département Communications & Electronique
3 Fert Beijing Institute and School of Electronic and Information Engineering
4 National ASIC System Engineering Technology Research Center

The Internet of Things (IoTs) relies on efficient node memories to process data among sensors, cloud and RF front-end. Both mainstream and emerging memories have been developed to achieve this energy efficiency target. Spin transfer torque magnetic tunnel junction (STT-MTJ)-based nonvolatile memory (NVM) has demonstrated great performance in terms of zero standby power, switching power efficiency, infinite endurance and high density. However, it still has a big performance gap; e.g., high dynamic write energy, large latency, yield and reliability. Recently, voltage-controlled magnetic anisotropy (VCMA) has been introduced to achieve improved energy-delay efficiency and robust non-volatile writing control with an electric field or a switching voltage. VCMA-MTJ-based MRAM could be a promising candidate in IoT node memory for high-performance, ultra-low power consumption targets.

Mots clés: STT-MRAM; VCMA-MRAM; Ultra-low power; Reliability

Domaines: Micro et nanotechnologies/Microélectronique

Hao Cai, Wang Kang, You Wang, Lirida Naviner, Jun Yang, et al.. High Performance MRAM with Spin-Transfer-Torque and Voltage-Controlled Magnetic Anisotropy Effects. Applied Sciences, 2017, 7 (9), pp.1-13. ⟨10.3390/app7090929⟩. ⟨hal-02287690⟩