MOVPE van der Waals epitaxial growth of AlGaN/AlGaN multiple quantum well structures with deep UV emission on large scale 2D h-BN buffered sapphire substrates

Suresh Sundaram (1) , Xin Li (2) , Saiful Alam (1) , Taha Ayari (1) , Yacine Halfaya (1) , Gilles Patriarche (3) , Paul B Voss (4, 1) , Jean-Paul Salvestrini (1) , Abdallah Ougazzaden (1)

1 Georgia Tech Lorraine [Metz]
2 UL - Université de Lorraine
3 LPN - Laboratoire de photonique et de nanostructures
4 Smith College, Picker Engineering Program, Northampton

We report wafer-scale growth and mechanical exfoliation of 20 periodAl0.58Ga0.42N/Al0.37Ga0.63N multiple quantum wells (MQWs) on h-BN buffered templates and compare them to control samples of the same structure on AlN templates. X-ray diffraction measurements of the MQW structure on h-BN clearly featured satellite peaks up to third order in the 2θ−ω scans indicating good MQW periodicity. Detailed transmission electron microscope (TEM) analysis show good heterointerface quality in the structure and large V-pits on the surface. Depth resolved cathodoluminescence of the MQWs on h-BN revealed a UV emission peak at 299 nm and a sharp shoulder at 292 nm. We also report lift-off and transfer of the MQW on the h-BN structure and have investigated post-transfer optical emission, which demonstrates good preservation of optical emission characteristics. Together these results show the suitability of h-BN buffers for the realization of free-standing or flexible optical devices emitting in the deep UV region.

Mots clés: A3. Metalorganic vapor phase epitaxy; B1. 2D materials; B1. h-BN B1. AlGaN MQWs; B2. Deep UV LEDs; B1. Nitrides

Domaines: Mécanique des matériaux [physics.class-ph]

Suresh Sundaram, Xin Li, Saiful Alam, Taha Ayari, Yacine Halfaya, et al.. MOVPE van der Waals epitaxial growth of AlGaN/AlGaN multiple quantum well structures with deep UV emission on large scale 2D h-BN buffered sapphire substrates. Journal of Crystal Growth, 2019, 507, pp.352-356. ⟨10.1016/j.jcrysgro.2018.10.060⟩. ⟨hal-02282679⟩