Integration of resistive switching NiO in small via structures from localized oxidation of nickel metallic layer - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2008
Fichier non déposé

Dates et versions

hal-02271988 , version 1 (27-08-2019)

Identifiants

  • HAL Id : hal-02271988 , version 1

Citer

L. Courtade, C. Turquat, J.G. Lisoni, L. Goux, D.J. Wouters, et al.. Integration of resistive switching NiO in small via structures from localized oxidation of nickel metallic layer. ESSDERC 2008 - 38th European Solid-State Device Research Conference, Sep 2008, Edinburgh, United Kingdom. pp.218-221. ⟨hal-02271988⟩
36 Consultations
0 Téléchargements

Partager

Gmail Facebook X LinkedIn More