Resistance change in memory structures integrating CuTCNQ nanowires grown on dedicated HfO2 switching layer

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https://hal.archives-ouvertes.fr/hal-02266382
Contributor : Christian Turquat <>
Submitted on : Wednesday, August 14, 2019 - 10:04:38 AM
Last modification on : Thursday, August 15, 2019 - 1:20:47 AM

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Ch. Muller, D. Deleruyelle, R. Müller, M. Thomas, A. Demolliens, et al.. Resistance change in memory structures integrating CuTCNQ nanowires grown on dedicated HfO2 switching layer. Solid-State Electronics, Elsevier, 2011, 56 (1), pp.168-174. ⟨10.1016/j.sse.2010.10.006⟩. ⟨hal-02266382⟩

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