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Critical thicknesses of highly strained InGaAs layers grown on InP by molecular beam epitaxy

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https://hal.archives-ouvertes.fr/hal-02200830
Contributor : Michel Gendry <>
Submitted on : Wednesday, July 31, 2019 - 12:01:19 PM
Last modification on : Wednesday, November 20, 2019 - 8:04:40 AM

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Michel Gendry, V. Drouot, C. Santinelli, G. Hollinger. Critical thicknesses of highly strained InGaAs layers grown on InP by molecular beam epitaxy. Applied Physics Letters, American Institute of Physics, 1992, 60 (18), pp.2249-2251. ⟨10.1063/1.107045⟩. ⟨hal-02200830⟩

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