Graphene synthesis on SiO2 using pulsed laser deposition with bilayer predominance

Yannick Bleu (1) , Florent Bourquard (1) , Valentin Gartiser , Anne-Sophie Loir (1) , Borja Caja-Munoz , José Avila (2) , Vincent Barnier (3) , Florence Garrelie (1) , Christophe Donnet (1)

1 LHC - Laboratoire Hubert Curien
2 SSOLEIL - Synchrotron SOLEIL
3 SMS-ENSMSE - Centre Science des Matériaux et des Structures

Here we report the low-defect synthesis of bilayer graphene film on SiO 2 with a nickel catalyst using pulsed laser deposition combined with rapid thermal annealing. A parametric study was performed with various initial amorphous carbon (a-C) film thicknesses and annealing temperatures and a fixed nickel catalyst film thickness. Raman spectra and mapping over large areas of up to 100 × 100 μm² were used to investigate the structure and the defects of graphene films. Optimal conditions for graphene growth were an initial a-C film thickness of 2 nm and an annealing temperature of 900°C. Results showed that 76% of the optimized film contained graphene bilayers, and 18% of the optimized film contained graphene monolayers. A transmittance of 87% at 550 nm is observed without any transfer process from the SiO 2 substrate. This paper presents experimental guidelines for optimal synthesis conditions to control graphene growth by pulsed laser deposition.

Mots clés: Bilayer graphene; Pulsed laser deposition; Raman mapping

Domaines: Matériaux; Matériaux

Yannick Bleu, Florent Bourquard, Valentin Gartiser, Anne-Sophie Loir, Borja Caja-Munoz, et al.. Graphene synthesis on SiO2 using pulsed laser deposition with bilayer predominance. Materials Chemistry and Physics, 2019, 238, pp.121905. ⟨10.1016/j.matchemphys.2019.121905⟩. ⟨hal-02197284⟩