Assessment of High Sn Incorporation in Ge NanoWires Synthesized via In Plane Solid-Liquid-Solid Mechanism by In-Situ TEM - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Microscopy and Microanalysis Année : 2018

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hal-02183481 , version 1 (15-07-2019)

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Simona Moldovan, Edy Azrak, Wanghua Chen, Shiwen Gao, Sébastien Duguay, et al.. Assessment of High Sn Incorporation in Ge NanoWires Synthesized via In Plane Solid-Liquid-Solid Mechanism by In-Situ TEM. Microscopy and Microanalysis, 2018, 24 (S1), pp.306-307. ⟨10.1017/S1431927618002027⟩. ⟨hal-02183481⟩
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