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NIR and MIR Absorption of Ultra-Black Silicon(UBS) Application To High Emissivity, All-Silicon, Light Source

Abstract : We present the Near-Infra-Red (NIR) and Mid-Infrared (MIR) absorption properties of Ultra-Black Silicon obtained by wafer-level cryogenic plasma processing. We found that when using highly-doped silicon, the spectral range of near-unity full absorption of light is extended from the visible range till a wavelength of 10 µm. This MIR wavelength range coincides with that of the maximum of black-body radiation from room temperature up to a few thousand Kelvin. Therefore, according to Kirchhoff's Law, we take advantage of the enhanced properties of black silicon to realize ultra-compact light-sources of high efficiency, which are operated in combination with a MEMS-FTIR spectrometer.
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https://hal.archives-ouvertes.fr/hal-02182951
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Submitted on : Sunday, July 14, 2019 - 9:33:40 AM
Last modification on : Saturday, January 15, 2022 - 3:56:42 AM

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  • HAL Id : hal-02182951, version 1

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Sreyash Sarkar, Ahmed Elsayed, E. Nefzaoui, Jérémie Drevillon, Philippe Basset, et al.. NIR and MIR Absorption of Ultra-Black Silicon(UBS) Application To High Emissivity, All-Silicon, Light Source. 2019 IEEE 32nd International Conference on Micro Electro Mechanical Systems (MEMS), Jan 2019, Seoul, South Korea. ⟨hal-02182951⟩

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