A HEMT-Based Cryogenic Charge Amplifier with sub-100 eVee Ionization Resolution for Massive Semiconductor Dark Matter Detectors

A. Phipps , A. Juillard (1) , B. Sadoulet , B. Serfass , Y. Jin (2)

1 IPNL - Institut de Physique Nucléaire de Lyon
2 C2N - Centre de Nanosciences et de Nanotechnologies [Orsay]

We present the measured baseline ionization resolution of a HEMT-based cryogenic charge amplifier coupled to a CDMS-II detector. The amplifier has been developed to allow massive semiconductor dark matter detectors to retain background discrimination at the low recoil energies produced by low-mass WIMPs. We find a calibrated baseline ionization resolution of σE=91eVee . To our knowledge, this is the best direct ionization resolution achieved with such massive ( ≈ 150 pF capacitance) radiation detectors.

Mots clés: HEMT amplifiers; Dark Matter detectors; Analogue electronic circuits; Frontend electronics for detector readout; Dark matter detectors; Front-end electronics for detector readout; dark matter: detector; amplifier: design; noise; background: electromagnetic; performance; energy resolution; cryogenics; semiconductor detector; electronics: readout

Domaines: Instrumentations et Détecteurs [physics.ins-det]

A. Phipps, A. Juillard, B. Sadoulet, B. Serfass, Y. Jin. A HEMT-Based Cryogenic Charge Amplifier with sub-100 eVee Ionization Resolution for Massive Semiconductor Dark Matter Detectors. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2019, 940, pp.181-184. ⟨10.1016/j.nima.2019.06.022⟩. ⟨hal-02171520⟩