Impact of recess etching and surface treatments on ohmic contacts regrown by molecular-beam epitaxy for AlGaN/GaN high electron mobility transistors

S. Joglekar , M. Azize (1) , M. Beeler (2) , E. Monroy (2) , T. Palacios

1 CRHEA - Centre de recherche sur l'hétéroepitaxie et ses applications
2 NPSC - Nanophysique et Semiconducteurs

Domaines: Science des matériaux [cond-mat.mtrl-sci]; Physique Quantique [quant-ph]; Optique [physics.optics]; Micro et nanotechnologies/Microélectronique; Optique / photonique

S. Joglekar, M. Azize, M. Beeler, E. Monroy, T. Palacios. Impact of recess etching and surface treatments on ohmic contacts regrown by molecular-beam epitaxy for AlGaN/GaN high electron mobility transistors. Applied Physics Letters, 2016, 109 (4), pp.041602. ⟨10.1063/1.4959831⟩. ⟨hal-02165980⟩