Characterization of an InAs/GaSb type-II superlattice barrier photodetector operating in the LWIR domain

Rodolphe Alchaar (1, 2) , Jean-Baptiste Rodriguez (1, 2) , L. Höglund (3) , S. Naureen (3) , Philippe Christol (1, 2)

1 IES - Institut d’Electronique et des Systèmes
2 NANOMIR - Composants à Nanostructure pour le moyen infrarouge
3 IRnova AB - Electrum 236

In this paper, structural, optical and electrical characterizations of longwave infrared barrier detectors based on the InAs/GaSb superlattice are reported and analyzed. The fabricated detectors exhibited a 50% cut-off wavelength around 10.5μm at 80K measured by photoluminescence and spectral response. The dark current density was 8.4×10-4A/cm2at 80K and a performance analysis combining spectral response, dark current-voltage characteristic and capacitance-voltage measurement curves was performed to determine the operating bias and the dark current regimes at different biases. Dark current simulations were also performed to better understand limiting dark current mechanisms of the device performance.

Domaines: Electronique; Micro et nanotechnologies/Microélectronique; Optique / photonique

Rodolphe Alchaar, Jean-Baptiste Rodriguez, L. Höglund, S. Naureen, Philippe Christol. Characterization of an InAs/GaSb type-II superlattice barrier photodetector operating in the LWIR domain. AIP Advances, 2019, 9 (5), pp.055012. ⟨10.1063/1.5094703⟩. ⟨hal-02162607⟩