M. Takamiya, K. Miyazaki, H. Obara, T. Sai, K. Wada et al., Power electronics 2.0: IoT-connected and Al-controlled power electronics operating optimally for each user, 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD), pp.29-32, 2017.

M. Rose, Y. Wen, R. Fernandes, R. Van-otten, H. J. Bergveld et al., A GaN HEMT driver IC with programmable slew rate and monolithic negative gate-drive supply and digital current-mode control, 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD), pp.361-364, 2015.

J. Yu, W. J. Zhang, A. Shorten, R. Li, and W. T. Ng, A smart gate driver IC for GaN power transistors, IEEE 30th International Symposium on Power Semiconductor Author version of the accepted article published in the IEEE proceedings ISPSD2019, 2018.

H. C. Dymond, J. Wang, D. Liu, J. J. Dalton, N. Mcneill et al., A 6.7-GHz Active Gate Driver for GaN FETs to Combat Overshoot, Ringing, and EMI, IEEE Transactions on Power Electronics, vol.33, issue.1, pp.581-594, 2018.

S. Park and T. M. Jahns, Flexible dv/dt and di/dt control method for insulated gate power switches, Conference Record of the 2001 IEEE Industry Applications Conference. 36th IAS Annual Meeting (Cat. No.01CH37248), vol.2, pp.1038-1045, 2001.

B. Sun, R. Burgos, X. Zhang, and D. Boroyevich, Active dv/dt control of 600V GaN transistors, 2016 IEEE Energy Conversion Congress and Exposition (ECCE), pp.1-8, 2016.

R. Grezaud, F. Ayel, N. Rouger, and J. Crebier, A Gate Driver with Integrated Dead-Time Controller, IEEE Transactions on Power Electronics, vol.31, issue.12, pp.1-1, 2016.

P. P. Bau, M. Cousineau, B. Cougo, F. Richardeau, D. Colin et al., A CMOS gate driver with ultra-fast dV/dt embedded control dedicated to optimum EMI and turn-on losses management for GaN power transistors, 2018 14th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), pp.105-108, 2018.
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