Realization of a High-Current and Low R_ON 600V Current-Limiting Device

F. Nallet (1, 2) , Phillippe Godignon (3) , Dominique Planson (1, 2) , Christophe Raynaud (4, 2) , Jean-Pierre P Chante (1, 2)

1 CEGELY - Centre de génie électrique de Lyon
2 INSA Lyon - Institut National des Sciences Appliquées de Lyon
3 CNM - Centro Nacional de Microelectronica [Spain]
4 LPQ - Laboratoire de Physique Quantique

4H-SiC P + NN + structures have been fabricated following Medici TM software simulation in order to block voltages as high as 6 kV. In particular, these diodes are realized by surrounding the emitter by a Aluminum-implanted ring called Junction Termination Extension (JTE). Electrical characterizations under reverse bias at room temperature and in various environments (air, SF 6) show a premature breakdown of the diodes. This breakdown is localized at the emitter periphery. OBIC (Optical Beam Induced Current) measurements show a peak of photocurrent at the emitter junction edge, indicating the presence of a high electric field. These results involve an effectiveness of 60 % of the JTE. This is probably related to a low electrical activation of the implanted aluminum during the post-implantation annealing and to the presence of positive charges at the surface of the devices. Introduction.

Mots clés: Surface charge; 4H-SiC; MOSFET; Current Limiting Device; Simulation; I-V Characteristics; Forward Current Density; Saturation; OBIC; JTE; Bipolar diode; Breakdown Voltage

Domaines: Energie électrique

F. Nallet, Phillippe Godignon, Dominique Planson, Christophe Raynaud, Jean-Pierre P Chante. Realization of a High-Current and Low R_ON 600V Current-Limiting Device. Materials Science Forum, 2002, 389-393, pp.1247-1250. ⟨10.4028/www.scientific.net/MSF.389-393.1247⟩. ⟨hal-02151717⟩