High Electrical Activation of Aluminium and Nitrogen Implanted in 6H-SiC at Room Temperature by RF Annealing

Mihai Lazar (1, 2, 3) , Laurent Ottaviani (4) , Marie-Laure Locatelli (2, 3) , Christophe Raynaud (2, 3) , Dominique Planson (2, 3) , Erwan Morvan (5) , Phillippe Godignon (6) , Wolfgang Skorupa (7) , Jean-Pierre P Chante (1, 2, 3)

1 CEGELY - Centre de génie électrique de Lyon
2 EE - Ampère, Département Energie Electrique
3 INSA Lyon - Institut National des Sciences Appliquées de Lyon
4 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence
5 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
6 CNM - Centro Nacional de Microelectronica [Spain]
7 Institute of Ion Beam Physics and Materials Research

Al and N implantations were carried out in 6H-SiC n-type epitaxial layers at room temperature. RBS/C analysis confirms the presence of an amorphous layer up to the surface in the as-implanted samples. The samples rf-annealed at 1700°C during 30 mn with a preliminary 40°C per second heating slope are recrystallised in RBS/C analysis terms. SIMS measurements show no dopant loosing after the annealing and dopant profile distributions are in agreement with CNM Monte-Carlo simulation. A good surface stoichiometry is revealed by XPS after annealing but AFM surface measurements reveal a relatively high rms roughness (14 nm) on annealed samples. High electrical activation of dopants was found, 19 kΩ/& sheet resistance, which corresponds to 50 % electrical dopant activation for Al implanted layer, and 6.7 kΩ/& sheet resistance and 100% electrical activation for N-implanted layer.

Mots clés: Ion Implantation; Annealing; Recrystallization; SIMS; AFM; Electrical Activation

Domaines: Energie électrique

Mihai Lazar, Laurent Ottaviani, Marie-Laure Locatelli, Christophe Raynaud, Dominique Planson, et al.. High Electrical Activation of Aluminium and Nitrogen Implanted in 6H-SiC at Room Temperature by RF Annealing. European Conference on Silicon Carbide and Related Materials 2000 (ECSCRM 2000), Sep 2000, Kloster Banz, Germany. pp.MoP-72. ⟨hal-02151711⟩