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, S2: Growth of AlInAs epilayers on InP (100) substrates by CBE using TriEthylAluminum (TEAl) precursor. S3: Leptos simulation of HR-XRD rocking curve for lattice matched AlInAs/InP grown by hybrid epitaxy. S4: Variation of In fraction in hybrid AlInAs epilayers as a function of growth parameter. S5: In-situ RHEED of GaInAs layers grown by CBE and hybrid epitaxy. S6: Surface morphology of GaInAs epilayers grown by CBE using TEGa and TMIn precursors, Crystalline properties of GaInAs epilayers grown by CBE. S8: LTPL measurements of GaInAs epilayers grown by CBE technique. S9: Variation of In and Ga fractions in hybrid GaInAs epilayers as a function of T g, vol.7