Study based on the numerical simulation of a 5 kV asymmetrical 4H-SiC thyristor for high power pulses application

N. Arssi (1) , M.L. Locatelli , Dominique Planson (1, 2) , J.P. Chante (1) , V. Zorngiebel (3) , E. Spahn (3) , S. Scharnholz (3)

1 CEGELY - Centre de génie électrique de Lyon
2 EE - Ampère, Département Energie Electrique
3 ISL - Institut franco-allemand de recherches de Saint-Louis

This paper focuses on the study of a 5 kV Asymmetrical 4H-SiC thyristor and on its Junction edge termination protection. Based on a numerical semiconductor simulator, doping level and thickness of the different layers that constitute the device will be proposed. Several techniques of periphery protection such as Mesa structure, Junction Termination Extension (JTE) and Epitaxial Guard Rings (EGRs) have been studied. Furthermore we report on the simulation of the finite element thyristor inserted in a circuit for an Electromagnetic Launching (EML) application.

Mots clés: SiC; Numerical Simulation; Thyristor; Junction Edge Termination; Mesa; JTE; EGRs; Power Pulse

Domaines: Energie électrique

N. Arssi, M.L. Locatelli, Dominique Planson, J.P. Chante, V. Zorngiebel, et al.. Study based on the numerical simulation of a 5 kV asymmetrical 4H-SiC thyristor for high power pulses application. CAS 2001 International Semiconductor Conference, Oct 2001, Sinaia, Romania. pp.341-344, ⟨10.1109/SMICND.2001.967479⟩. ⟨hal-02145398⟩