4H-SiC bipolar power diodes realized by ion implantation

M. Lazar (1, 2) , Dominique Planson (1, 3, 2) , K. Isoird (1, 2) , Marie-Laure Locatelli (1, 2) , Christophe Raynaud (1, 2) , J.P. Chante (1, 2)

1 CEGELY - Centre de génie électrique de Lyon
2 INSA Lyon - Institut National des Sciences Appliquées de Lyon
3 EE - Ampère, Département Energie Electrique

Physico-chemical and electrical investigations were carried out in 4H-SiC p-type layers created by Aluminum ion implantation at room temperature and high temperature post-implantation annealing. Crystal recovery and dopant preservation after annealing are proved by RBS/C and respectively SIMS measurements. Dopant activation is evaluated by sheet resistance measurements. These results were applied for high voltage bipolar diodes with JTE protection realization.

Mots clés: SiC; ion implantation; SIMS; recrystallization; electrical activation; high voltage diode; JTE

Domaines: Energie électrique

M. Lazar, Dominique Planson, K. Isoird, Marie-Laure Locatelli, Christophe Raynaud, et al.. 4H-SiC bipolar power diodes realized by ion implantation. CAS 2001 International Semiconductor Conference, Oct 2001, Sinaia, Romania. pp.349-352, ⟨10.1109/SMICND.2001.967481⟩. ⟨hal-02145397⟩