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Very High Sustainable Forward Current Densities on 4H-SiC P+N- Junctions formed by localized VLS P+ epitaxy

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https://hal.archives-ouvertes.fr/hal-02138729
Contributor : Dominique Planson <>
Submitted on : Friday, May 24, 2019 - 9:45:17 AM
Last modification on : Monday, September 13, 2021 - 2:44:04 PM

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  • HAL Id : hal-02138729, version 1

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Selsabil Sejil, Loïc Lalouat, Mihai Lazar, Davy Carole, Christian Brylinski, et al.. Very High Sustainable Forward Current Densities on 4H-SiC P+N- Junctions formed by localized VLS P+ epitaxy. ECSCRM'16, Sep 2016, Halkidiki, Greece. ⟨hal-02138729⟩

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