Very High Sustainable Forward Current Densities on 4H-SiC P+N- Junctions formed by localized VLS P+ epitaxy

Selsabil Sejil (1, 2) , Loïc Lalouat (1, 3) , Mihai Lazar (2) , Davy Carole (1) , Christian Brylinski (1) , François Jomard (4) , Dominique Planson (2, 5) , Gabriel Ferro (1) , Christophe Raynaud (2, 5)

1 LMI - Laboratoire des Multimatériaux et Interfaces
2 EE - Ampère, Département Energie Electrique
3 AMPERE - Ampère
4 GEMAC - Groupe d'Etude de la Matière Condensée
5 INSA Lyon - Institut National des Sciences Appliquées de Lyon

Domaines: Energie électrique

Selsabil Sejil, Loïc Lalouat, Mihai Lazar, Davy Carole, Christian Brylinski, et al.. Very High Sustainable Forward Current Densities on 4H-SiC P+N- Junctions formed by localized VLS P+ epitaxy. ECSCRM'16, Sep 2016, Halkidiki, Greece. ⟨hal-02138729⟩