Thermally stable ohmic contact to p-type 4H-SiC based on Ti3SiC2 phase

Tony Abi-Tannous (1, 2) , Maher Soueidan (1, 2) , G. Ferro (3) , Mihai Lazar (1, 2) , Christophe Raynaud (1, 2) , Dominique Planson (1, 2)

1 EE - Ampère, Département Energie Electrique
2 INSA Lyon - Institut National des Sciences Appliquées de Lyon
3 LMI - Laboratoire des Multimatériaux et Interfaces

The high-temperature functionality of SiC devices is useless without ohmic contacts that are also capable of operation under the same conditions. However, during long-term operation at high temperatures, reactions between metal and SiC can continue to evolve, thus leading to an alteration of the interface properties. The aim of this work is to realize an ohmic contact on p-type SiC that is the as stable as possible during a high temperature ageing. P-Type 4H-SiC has a high work function (around 6-7 eV) and it does not exist any conventional metal that leads to low Schottky barrier height when deposited on P-Type 4H-SiC. Toward this aim, Titanium Silicon Carbide (Ti3SiC2) is one of the best candidate materials, because this carbide, of the MAX phase family, has a very interesting combination of metallic and ceramic properties, together with an excellent chemical stability with SiC.

Domaines: Energie électrique

Tony Abi-Tannous, Maher Soueidan, G. Ferro, Mihai Lazar, Christophe Raynaud, et al.. Thermally stable ohmic contact to p-type 4H-SiC based on Ti3SiC2 phase. ICSCRM, Oct 2015, Giardini Naxos, Italy. ⟨hal-02138520⟩