Impact of Design on Electrical Characteristics of 3.5 kV 4H-SiC JBS Diode

Pierre Brosselard (1, 2) , Florian Chevalier (1, 2) , Benjamin Proux (2) , Nicolas Thierry-Jebali (1, 2) , Pascal Bevilacqua (1, 2) , Dominique Tournier (1, 3, 4) , Dominique Planson (1, 2) , Grégory Grosset (5) , Lionel Dupuy (5)

1 EE - Ampère, Département Energie Electrique
2 INSA Lyon - Institut National des Sciences Appliquées de Lyon
3 CNM - Centro Nacional de Microbiología [ISCIII, Madrid, Spain]
4 CALY Technologies
5 Société IBS

This work reports on the fabrication and electrical characterization of 3 different diodes. The first one is a Schottky diode with a single 50 micrometer P+ ring between the edge termination and the active area. The two other diodes are JBS with a 3 micrometer P+ strips separated by 4 micrometer and 8 micrometer respectively. The breakdown voltage ranges from 2.7kV up to 3.7kV depending on the P+/N area. The 3 different diodes exhibit a similar on-resistance versus the temperature behavior. Moreover, no contribution of the bipolar conduction is observed and no degradation has been observed when a forward stress is performed in forward mode and also in reverse.

Mots clés: 4H-SiC, JBS diode, Schottky diode

Domaines: Energie électrique

Pierre Brosselard, Florian Chevalier, Benjamin Proux, Nicolas Thierry-Jebali, Pascal Bevilacqua, et al.. Impact of Design on Electrical Characteristics of 3.5 kV 4H-SiC JBS Diode. Materials Science Forum, 2015, 806, pp.117-120. ⟨10.4028/www.scientific.net/MSF.806.117⟩. ⟨hal-02133670⟩