Surge driven evolution of Schottky barrier height on 4H-SiC JBS diodes

Besar Asllani (1, 2) , J B Fonder (3) , Pascal Bevilacqua (1, 2) , Dominique Planson (1, 2) , L. Phung (1, 2) , Pierre Brosselard (3)

1 EE - Ampère, Département Energie Electrique
2 INSA Lyon - Institut National des Sciences Appliquées de Lyon
3 CALY Technologies

In this paper we will present the results of repetitive surge stress carried out on six 3.3 kV5A Ti/Ni 4H-SiC JBS diodes. Repetitive current peaks between 10A and 24A have been applied and some diodes were able to endure 100,000 cycles while others failed before. The causes of failure have not been determined but a correlation between peak surge current and physical parameters evolution rate has been proven. Simulations show that contact temperature during surge can reach 300°C, which is very close to Schottky contact annealing temperatures.

Mots clés: Barrier heigh evolution; Contact annealing; Surge Cycling; JBS; 4H-SiC; Schottky barrier

Domaines: Energie électrique

Besar Asllani, J B Fonder, Pascal Bevilacqua, Dominique Planson, L. Phung, et al.. Surge driven evolution of Schottky barrier height on 4H-SiC JBS diodes. International Conference on Silicon Carbide and Related Materials 2017 (ICSCRM 2017), Sep 2017, Washington DC, United States. ⟨hal-02132576⟩