Dependence of open-circuit voltage in hydrogenated protocrystalline silicon solar cells on carrier recombination in pÕi interface and bulk regions

Joshua Pearce (1) , Randy J Koval , Andre S Ferlauto , Robert W Collins , Christopher R Wronski , Jeffrey Yang , Subbhendu Guha

1 Michigan Tech Open Sustainability Laboratory

Contribution of carrier recombination from the p/i interface regions and the bulk to the dark current-voltage (J D-V) and short-circuit current-open-circuit voltage (J sc-V oc) characteristics of hydrogenated amorphous-silicon a-Si:H p-in and n-i-p solar cells have been separated, identified, and quantified. Results are presented and discussed here which show that a maximum 1 sun V oc for a given bulk material can be validly extrapolated from bulk dominated J sc-V oc characteristics at low illumination intensities.

Domaines: Electronique

Joshua Pearce, Randy J Koval, Andre S Ferlauto, Robert W Collins, Christopher R Wronski, et al.. Dependence of open-circuit voltage in hydrogenated protocrystalline silicon solar cells on carrier recombination in pÕi interface and bulk regions. Applied Physics Letters, 2000. ⟨hal-02120556⟩