Characterization and Comparison of 1.2kV SiC Power Devices from Cryogenic to High Temperature

Thibaut Chailloux (1, 2) , Cyril Calvez (1, 2) , Dominique Tournier (1, 2) , Dominique Planson (1, 2)

1 EE - Ampère, Département Energie Electrique
2 INSA Lyon - Institut National des Sciences Appliquées de Lyon

The aim of this study consists in comparing effects of temperature on various Silicon Carbide power devices. Static and dynamic electrical characteristics have been measured for temperatures from 80K to 525K.

Mots clés: JFET; MOSFET; BJT; cryogenic temperature; high temperature; SiC

Domaines: Energie électrique; Electronique

Thibaut Chailloux, Cyril Calvez, Dominique Tournier, Dominique Planson. Characterization and Comparison of 1.2kV SiC Power Devices from Cryogenic to High Temperature. Materials Science Forum, 2015, 821-823, pp.814-817. ⟨10.4028/www.scientific.net/MSF.821-823.814⟩. ⟨hal-02116809⟩