E. R. Fossum and D. B. Hondongwa, A review of the pinned photodiode for CCD and CMOS image sensors, IEEE J. Electron Devices Soc, vol.2, issue.3, pp.33-43, 2014.

S. Lauxtermann, A. Lee, J. P. Stevens, and A. Joshi, Comparison of global shutter pixels for CMOS image sensors, Proc. IEEE Int. Image Sensor Workshop (IISW), 2007.

G. Meynants, Global shutter imagers for industrial applications, Proc. SPIE, vol.9141, 2014.

,

V. Goiffon, Radiation effects on CMOS active pixel image sensors, Ionizing Radiation Effects in Electronics: From Memories to Imagers, pp.295-332, 2015.

C. Sah, R. N. Noyce, and W. Shockley, Carrier generation and recombination in P-N junctions and P-N junction characteristics, Proc. IRE, vol.45, pp.1228-1243, 1957.

I. H. Hopkins and G. R. Hopkinson, Random telegraph signals from proton-irradiated CCDs, IEEE Trans. Nucl. Sci, vol.40, issue.6, pp.1567-1574, 1993.

G. R. Hopkinson, C. J. Dale, and P. W. Marshall, Proton effects in charge-coupled devices, IEEE Trans. Nucl. Sci, vol.43, issue.2, pp.614-627, 1996.

J. Bogaerts, B. Dierickx, and R. Mertens, Random telegraph signals in a radiation-hardened CMOS active pixel sensor, IEEE Trans. Nucl. Sci, vol.49, issue.1, pp.249-257, 2002.

A. Jay, Simulation of single particle displacement damage in silicon-Part II: Generation and long-time relaxation of damage structure, IEEE Trans. Nucl. Sci, vol.64, issue.1, pp.141-148, 2017.
URL : https://hal.archives-ouvertes.fr/hal-01407740

T. Tsai, D. Marchesan, N. Faramarzpour, M. Sonder, and E. Fox, Twinkling behavior in ultra-high-resolution CMOS global shutter pixels, Proc. IEEE Int. Image Sensor Workshop (IISW), pp.98-101, 2015.

V. Goiffon, G. R. Hopkinson, P. Magnan, F. Bernard, G. Rolland et al., Multilevel RTS in proton irradiated CMOS image sensors manufactured in a deep submicron technology, IEEE Trans. Nucl. Sci, vol.56, issue.4, pp.2132-2141, 2009.

C. Durnez, V. Goiffon, C. Virmontois, J. Belloir, P. Magnan et al., In-depth analysis on radiation induced multilevel dark current random telegraph signal in silicon solid state image sensors, IEEE Trans. Nucl. Sci, vol.64, issue.1, pp.19-26, 2017.

J. R. Srour and D. H. Lo, Universal damage factor for radiation-induced dark current in silicon devices, IEEE Trans. Nucl. Sci, vol.47, issue.6, pp.2451-2459, 2000.

P. W. Marshall, C. J. Dale, and E. A. Burke, Proton-induced displacement damage distributions and extremes in silicon microvolumes charge injection device, IEEE Trans. Nucl. Sci, vol.37, issue.6, pp.1776-1783, 1990.

R. Germanicus, Evaluation and prediction of the degradation of a COTS CCD induced by displacement damage, IEEE Trans. Nucl. Sci, vol.49, issue.6, pp.2830-2835, 2002.
URL : https://hal.archives-ouvertes.fr/hal-00327069

O. Gilard, E. Martin, T. Nuns, C. Inguimbert, and J. David, Statistical analysis of random telegraph signal maximum transition amplitudes in an irradiated CMOS image sensor, IEEE Trans. Nucl. Sci, vol.61, issue.2, pp.939-947, 2014.
DOI : 10.1109/tns.2014.2309480

C. Inguimbert, Modeling the dark current non-uniformity of image sensors with GEANT4, IEEE Trans. Nucl. Sci, vol.61, issue.6, pp.3323-3330, 2014.

J. Belloir, Pixel pitch and particle energy influence on the dark current distribution of neutron irradiated CMOS image sensors, Opt. Express, vol.24, issue.4, pp.4299-4315, 2016.
URL : https://hal.archives-ouvertes.fr/hal-01450930

V. Goiffon, P. Magnan, O. Saint-pé, F. Bernard, and G. Rolland, Ionization versus displacement damage effects in proton irradiated CMOS sensors manufactured in deep submicron process, Nucl. Instrum. Methods Phys. Res. A, Accel., Spectrometers, Detectors Assoc. Equip, vol.610, issue.1, pp.225-229, 2009.
DOI : 10.1016/j.nima.2009.05.078

J. R. Srour and R. A. Hartmann, Enhanced displacement damage effectiveness in irradiated silicon devices, IEEE Trans. Nucl. Sci, vol.36, issue.6, pp.1825-1830, 1989.
DOI : 10.1109/23.45375

J. Bogaerts, B. Dierickx, and R. Mertens, Enhanced dark current generation in proton-irradiated CMOS active pixel sensors, IEEE Trans. Nucl. Sci, vol.49, issue.3, pp.1513-1521, 2002.
DOI : 10.1109/tns.2002.1039695

M. S. Robbins and L. G. Rojas, An assessment of the bias dependence of displacement damage effects and annealing in silicon charge coupled devices, IEEE Trans. Nucl. Sci, vol.60, issue.6, pp.4332-4340, 2013.

C. Virmontois, Total ionizing dose versus displacement damage dose induced dark current random telegraph signals in CMOS image sensors, IEEE Trans. Nucl. Sci, vol.58, issue.6, pp.3085-3094, 2011.
DOI : 10.1109/tns.2011.2171005

C. Virmontois, Dark current random telegraph signals in solid-state image sensors, IEEE Trans. Nucl. Sci, vol.60, issue.6, pp.4323-4331, 2013.
DOI : 10.1109/tns.2013.2290236
URL : https://hal.archives-ouvertes.fr/ujm-00844914

B. Pain, T. Cunningham, B. Hancock, C. Wrigley, and C. Sun, Excess noise and dark current mechanisms in CMOS imagers, Proc. IEEE Workshop CCD's Adv, pp.145-148, 2005.
DOI : 10.1117/12.512281

H. Yamashita, M. Maeda, S. Furuya, and T. Yagami, Analysis of dark current in 4-transistor CMOS imager pixel with negative transfer-gate bias operation, Proc. IEEE Int. Image Sensor Workshop (IISW), pp.1-4, 2009.

P. A. Martin, B. G. Streetman, and K. Hess, Electric field enhanced emission from non-Coulombic traps in semiconductors, J. Appl. Phys, vol.52, issue.12, pp.7409-7415, 1981.
DOI : 10.1063/1.328731

W. P. Noble, S. H. Voldman, and A. Bryant, The effects of gate field on the leakage characteristics of heavily doped junctions, IEEE Trans. Electron. Devices, vol.36, issue.4, pp.720-726, 1989.

C. Y. and -. Chao, Random telegraph noises in CMOS image sensors caused by variable gate-induced sense node leakage due to X-ray irradiation, IEEE J. Electron Devices Soc
DOI : 10.1109/jeds.2019.2893299
URL : https://doi.org/10.1109/jeds.2019.2893299

B. R. Hancock and G. A. Soli, Total dose testing of a CMOS charged particle spectrometer, IEEE Trans. Nucl. Sci, vol.44, issue.6, pp.1957-1964, 1997.
DOI : 10.1109/23.658968